Fuste, N.Avino, O.Vellvehi, M.Perpina, X.Godignon, P.Seddon, R.Obieta, I.Maudes, J.Jorda, X.2024-07-242024-07-242020-07Fuste , N , Avino , O , Vellvehi , M , Perpina , X , Godignon , P , Seddon , R , Obieta , I , Maudes , J & Jorda , X 2020 , Simulation-Based Analysis of Thermo-Mechanical Constraints in Packages for Diamond Power Devices . in 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2020 . , 9152713 , 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2020 , Institute of Electrical and Electronics Engineers Inc. , 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2020 , Cracow , Poland , 5/07/20 . https://doi.org/10.1109/EuroSimE48426.2020.9152713conference9781728160498https://hdl.handle.net/11556/2773Publisher Copyright: © 2020 IEEE.Diamond is one of the best wide band-gap semiconductor materials available for high power devices development in terms of high current capability, high temperature operability, breakdown voltage and switching speed. Unfortunately, fabrication technology for diamond devices is still experimental and immature. Furthermore, one of the most critical fields to be addressed for practical diamond devices implementation concerns the development of power packaging solutions, given that limitations in the device packaging would hinder the performance of the device and act as the limiting factor for a technology that is still in a development state. Of special interest are the induced stresses and deformations caused by the thermo-mechanical mismatch between materials. These stresses and strains will be considerably different than the ones obtained with silicon or SiC dies, and it will be especially noticeable in high temperature applications due to the higher temperature swings and the reliability constraints that arise from the coefficient of thermal expansion mismatch and stiffness difference. In this paper, a Finite Element Method for thermo-mechanical simulation of a high-temperature thermal cycle for a full-stacked diamond die SOT-227 power module is introduced and compared to silicon- and SiC-die modules. Special interest is addressed to the analysis of stress and deformations generated in the die and die-attach solder layer.enginfo:eu-repo/semantics/restrictedAccessconference output10.1109/EuroSimE48426.2020.9152713Fluid Flow and Transfer ProcessesElectrical and Electronic EngineeringComputational MechanicsMechanical EngineeringSafety, Risk, Reliability and QualityElectronic, Optical and Magnetic MaterialsModeling and Simulationhttp://www.scopus.com/inward/record.url?scp=85090412032&partnerID=8YFLogxK