TY  - CONF
AU  - Marcos, J.
AU  - Cobo, I.
AU  - Barcena, J.
AU  - Maudes, J.
AU  - Amado, R.
AU  - Vellvehi, M.
AU  - Jorda, X.
AU  - Obieta, I.
AU  - Guraya, C.
AU  - Bilbao, L.
AU  - Jiménez, C.
AU  - Coleto, J.
PY  - 2008
SN  - 9781615671601
UR  - https://hdl.handle.net/11556/2605
AB  - Devices based on wide-bandgap semiconductors such as SiC or GaN allow high power densities and elevated working temperatures. Here we present an innovative package for high-power electronics, within the framework of an ESA-contracted project. The...
LA  - eng
TI  - Advanced packaging for GaN high power electronics
TY  - conference output
ER  -