Analysis of energy losses for SiC and Si diodes in half-bridge modules and future applications

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URI: https://hdl.handle.net/11556/2040
ISBN: 9781612841670
Publication date
2011
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Abstract
The aim of this paper is to show the reduction in energy losses obtained through experimentation when making use of Silicon Carbide (SiC) diodes instead of Si ones. In order to make the comparison as much accurate as possible both diodes were developed applying the same bonding and package techniques and were tested under exactly the same working conditions. Experimental voltage and current waveforms during the switching process and energy losses measurements are shown in the paper.
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Energy losses , Schottky diode , Silicon Carbide SiC , Wide bandgap devices , Electrical and Electronic Engineering
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conference output
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Sierra , M T , Gabiola , I , Pujana , A , Apiñaniz , S & Ibañez , P 2011 , Analysis of energy losses for SiC and Si diodes in half-bridge modules and future applications . in Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011 . , 6020158 , Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011 , 2011 14th European Conference on Power Electronics and Applications, EPE 2011 , Birmingham , United Kingdom , 30/08/11 .
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