Browsing by Keyword "PVD magnetron sputtering"

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    Development of highly permeable ultra-thin Pd-based supported membranes
    (2016-12-01) Fernandez, Ekain; Sanchez-Garcia, Jose Angel; Melendez, Jon; Spallina, Vincenzo; van Sint Annaland, Martin; Gallucci, Fausto; Pacheco Tanaka, D. A.; Prema, Radha; TECNOLOGÍAS DE HIDRÓGENO; Tecnalia Research & Innovation; TECNOLOGÍA DE MEMBRANAS E INTENSIFICACIÓN DE PROCESOS
    This paper reports the preparation and characterization of ultra-thin (∼1 μm thick) Pd-based supported membranes for hydrogen purification. Ultra-thin membranes have been prepared by a combination of PVD magnetron sputtering and electroless plating techniques. The membranes have been characterized for single gas and mix gas permeation at temperatures between 350 and 500 °C and they have shown to exhibit very high hydrogen fluxes combined with a good perm-selectivity (H2/N2 ≈ 500). These results have been compared with the performance of highly permeable membranes reported in the literature. The influence of the morphology of the deposited Pd-based layers on the membrane performance has been investigated and discussed.
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    Morphology and N2 Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes
    (2016-02-10) Fernandez, Ekain; Sanchez-Garcia, Jose Angel; Viviente, J.L.; van Sint Annaland, Martin; Gallucci, Fausto; Pacheco Tanaka, David A.; Tecnalia Research & Innovation; TECNOLOGÍAS DE HIDRÓGENO; TECNOLOGÍA DE MEMBRANAS E INTENSIFICACIÓN DE PROCESOS
    The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM), and the results indicate an increase of the grain size from 120 to 250–270 nm and film surface roughness from 4–5 to 10–12 nm when increasing the temperature from around 360–510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5–2-µm thick) films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO2 3-nm top layer supports (smallest pore size among all tested) present high N2 permeance in the order of 10−6 mol•m−2•s−1•Pa−1 at room temperature.