Browsing by Author "Jorda, X."
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Item Advanced packaging for GaN high power electronics(2008) Marcos, J.; Cobo, I.; Barcena, J.; Maudes, J.; Amado, R.; Vellvehi, M.; Jorda, X.; Obieta, I.; Guraya, C.; Bilbao, L.; Jiménez, C.; Coleto, J.; Tecnalia Research & Innovation; EXTREMAT; PRINTEX; MercadoDevices based on wide-bandgap semiconductors such as SiC or GaN allow high power densities and elevated working temperatures. Here we present an innovative package for high-power electronics, within the framework of an ESA-contracted project. The housing concept, design study, materials selection, manufacturing method and first test results are the parameters to be followed in order to get this innovative electronic package. Materials are selected for their high thermal conductivity (TC) and low coefficient of thermal expansion (CTE). Several materials were selected: A1N was selected as substrate material, and novel metal-matrix composites (MMCs) based on Cu-Diamond were evaluated as heat-sink materials. Determination of the final dimensions of the housings according to the new design was required to get a complete bonding. This new heat sink geometry has been validated and the new components fabrication has been already started. An improved surface quality has been achieved, which will increase the contact between the heat sink and the aluminum spreader for electrical characterization. Subsequently, a complete bonding study between ceramic materials and the MMCs was performed. Determination of the final dimensions of the housings according to the new design was required to get a complete bonding. This new MMCs heat sink geometry has been validated and the new components fabrication has been selected. An improved surface quality has been achieved, which will increase the contact between the heat sink and the aluminum spreader for high temperature electrical characterization. In order to obtain fully dense materials A1N was manufactured by pressureless sintering, while the MMCs parts were manufactured by hot-pressing. The MMCs powders were obtained by an electroless plating process. Preliminary characterization of the housing and its parts show encouraging results as a solution for high-power devices working at temperatures up to 400 °C. TC near 500W/mK and CTEs of around 10 ppm/K have been obtained. These are comparable to the stateof-the-art materials. Out-gassing, thermal cycling and hermeticity tests of the packages and high temperature electrical characterization of the electronic paths and global package were performed. The presented new packaging solutions are showing great promise for space applications such as high-frequency power amplifiers for satellite communications and for radar transmitters, and have started to generate an interest from commercial space-system manufacturers.Item Innovative packaging solution for power and thermal management of wide-bandgap semiconductor devices in space applications(American Institute of Aeronautics and Astronautics Inc., 2006) Barcena, J.; Merveille, C.; Maudes, J.; Vellvehi, M.; Jorda, X.; Obieta, I.; Guraya, C.; Bilbao, L.; Jiménez, C.; Coleto, J.; EXTREMAT; PRINTEX; Tecnalia Research & Innovation; MercadoDevices based on wide-bandgap semiconductors such as SiC or GaN allow high power densities and elevated working temperatures. Here we present an innovative package for high-power electronics, within the framework of an ESA-contracted project. The paper shows the housing concept, design study, materials selection, manufacturing method and first test results. Materials are selected for their high thermal conductivity (TC) and low coefficient of thermal expansion (CTE). Several materials were selected: AlN was selected as substrate material, and novel metal-matrix composites (MMCs) based on Cu-Diamond and CuVapour Grown Carbon Nanofibres (VGCNFs) were evaluated as heat-sink materials. Subsequently, a complete bonding study between ceramic materials and the MMCs was performed. In order to obtain fully dense materials AlN was manufactured by pressureless sintering, while the MMCs parts were manufactured by hot-pressing. The MMCs powders were obtained by an electroless plating process. Preliminary characterisation of the housing and its parts show encouraging results as a solution for high-power devices working at temperatures up to 300 °C. TC near 500W/mK and CTEsof around 10 ppm/K. have been obtained. These are comparable to the state-of-the-art materials. Out-gassing, thermal cycling and hermeticity tests of the packages were performed. The presented new packaging solutions are showing great prorrise for space applications such as high -frequency power amplifiers for satellite communications and for radar transmitters, and have started to generate an interest from commercial space-systemmanufacturers.Item Innovative packaging solution for power and thermal management of wide-bandgap semiconductor devices in space applications(2008-03) Barcena, J.; Maudes, J.; Vellvehi, M.; Jorda, X.; Obieta, I.; Guraya, C.; Bilbao, L.; Jiménez, C.; Merveille, C.; Coleto, J.; EXTREMAT; PRINTEX; Tecnalia Research & Innovation; MercadoDevices based on wide-bandgap semiconductors such as SiC or GaN allow high power densities and elevated working temperatures. Here we present an innovative package for high-power electronics, within the framework of an ESA-contracted project. The paper shows the housing concept, design study, materials selection, manufacturing method and first test results. Materials are selected for their high thermal conductivity (TC) and low coefficient of thermal expansion (CTE). Several materials were selected: AlN was selected as substrate material, and novel metal-matrix composites (MMCs) based on Cu-diamond and Cu-vapour grown carbon nanofibres (VGCNFs) were evaluated as heat-sink materials. Subsequently, a complete bonding study between ceramic materials and MMCs was performed. In order to obtain fully dense materials AlN was manufactured by pressureless sintering, while the MMC parts were manufactured by hot-pressing. The MMC powders were obtained by an electroless plating process. Preliminary characterisation of the housing and its parts show encouraging results as a solution for high-power devices working at temperatures up to 300 °C. TC near 500 W/mK and CTEs of around 10 ppm/K have been obtained. These are comparable to the state-of-the-art materials. Out-gassing, thermal cycling and hermeticity tests of the packages were performed. The presented new packaging solutions show great promise for space applications such as high-frequency power amplifiers for satellite communications and for radar transmitters, and have started to generate an interest from commercial space-system manufacturers.Item Simulation-Based Analysis of Thermo-Mechanical Constraints in Packages for Diamond Power Devices(Institute of Electrical and Electronics Engineers Inc., 2020-07) Fuste, N.; Avino, O.; Vellvehi, M.; Perpina, X.; Godignon, P.; Seddon, R.; Obieta, I.; Maudes, J.; Jorda, X.; POLIMEROS; Tecnalia Research & Innovation; PRINTEXDiamond is one of the best wide band-gap semiconductor materials available for high power devices development in terms of high current capability, high temperature operability, breakdown voltage and switching speed. Unfortunately, fabrication technology for diamond devices is still experimental and immature. Furthermore, one of the most critical fields to be addressed for practical diamond devices implementation concerns the development of power packaging solutions, given that limitations in the device packaging would hinder the performance of the device and act as the limiting factor for a technology that is still in a development state. Of special interest are the induced stresses and deformations caused by the thermo-mechanical mismatch between materials. These stresses and strains will be considerably different than the ones obtained with silicon or SiC dies, and it will be especially noticeable in high temperature applications due to the higher temperature swings and the reliability constraints that arise from the coefficient of thermal expansion mismatch and stiffness difference. In this paper, a Finite Element Method for thermo-mechanical simulation of a high-temperature thermal cycle for a full-stacked diamond die SOT-227 power module is introduced and compared to silicon- and SiC-die modules. Special interest is addressed to the analysis of stress and deformations generated in the die and die-attach solder layer.